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Article

Programming a nonvolatile memory-like sensor for KRAS gene sensing and signal enhancement.

Biosensors & bioelectronics - 15 May 2016

Lin Yi-Ting, Purwidyantri Agnes, Luo Ji-Dung, Chiou Chiuan-Chian, Yang Chia-Ming, Lo Chih-Hong, Hwang Tsann-Long, Yen Tzung-Hai, Lai Chao-Sung

Abstract excerpt

A programmable field effect-based electrolyte-insulator-semiconductor (EIS) sensor constructed with a nonvolatile memory-like structure is proposed for KRAS gene DNA hybridization detection. This programmable EIS structure was fabricated with silicon oxide (SiO2)/silicon nitride (Si3N4)/silicon oxide on a p-type silicon wafer, namely electrolyte-oxide-nitride-oxide-Si (EONOS). In this research, voltage stress...

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Methodology Data sources Editorial policy Privacy About Contact Helena Bioinformatics

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Identifiers

PMID: 26700577
DOI: 10.1016/j.bios.2015.11.080

Genes

KRAS

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